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FDP12N50

Part No FDP12N50
Manufacturer ON Semiconductor
Catalog FETs - Single
Description N-Channel MOSFET 500V, 11.5A, 0.65Ω | MOSFET N-CH 500V 11.5A TO-220
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 500V
Id - Continuous Drain Current 11.5A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 650mOhm at 6A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 30nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 1315pF at 25V
Power Dissipation (Maximum) 165W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220-3
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1173868-FDP12N50
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FDP12N50 CAD Model

Description

FDP12N50 MOSFET Overview

The FDP12N50 is a high-performance N-Channel MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This device is engineered to deliver superior power efficiency and reliability for a wide range of applications. The FDP12N50 is particularly suited for high-power switching and power supply systems where energy efficiency is paramount.

Key Features

  • High Current Capability: The FDP12N50 is capable of handling continuous drain currents up to 12A, making it suitable for high-power applications.
  • High Voltage Tolerance: With a drain-to-source voltage (Vdss) of 500V, this MOSFET can efficiently manage high voltage operations, providing a wide safety margin for electrical devices.
  • Low On-Resistance: The low on-state resistance (Rds(on)) of the FDP12N50 minimizes conduction losses, ensuring better power efficiency and thermal performance.
  • Fast Switching Speed: Fast switching capabilities reduce transition losses and improve the overall efficiency of the device in high-frequency applications.
  • Robust Thermal Characteristics: The FDP12N50 comes in a TO-220 package, which offers excellent heat dissipation properties to maintain stability under high thermal conditions.

Applications

The versatility of the FDP12N50 MOSFET makes it suitable for a variety of applications, including:

  • Power supply units (PSUs)
  • DC-DC converters
  • Motor drives
  • Inverters
  • Lighting systems
  • Industrial power systems

Quality and Reliability

ON Semiconductor is committed to providing high-quality products. The FDP12N50 MOSFET is subjected to rigorous testing and quality control measures to ensure it meets the high standards expected from ON Semiconductor products. Reliability is a cornerstone of this device's design, ensuring a long operational lifespan even under strenuous conditions.

Environmental Compliance

The FDP12N50 is designed with environmental considerations in mind. It complies with RoHS directives, which means it is free from hazardous substances, making it a safer choice for both the environment and consumers.

In summary, the FDP12N50 from ON Semiconductor is a robust, efficient, and reliable solution for designers looking to optimize their power management systems with a high-performance N-Channel MOSFET.

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