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PMCXB900UELZ

Part No PMCXB900UELZ
Manufacturer Nexperia USA Inc.
Catalog FETs - Arrays
Description 20 V, COMPLEMENTARY N/P-CHANNEL
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Nexperia USA Inc.
Series -
Package Tape & Reel
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel Complementary
FET Feature -
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 600mA
Rds On (Max) @ Id, Vgs 620mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 21.3pF @ 10V
Power - Max 380mW
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-XFDFN Exposed Pad
Supplier Device Package DFN1010B-6
Base Product Number PMCXB900
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1376809-PMCXB900UELZ
Ultra Librarian 3D Model Ultra Librarian PMCXB900UELZ CAD Model

Description

The 1376809-PMCXB900UELZ is a MOSFET array from Nexperia USA Inc.

  • Application: Discrete Semiconductor
  • Operating Temperature: -55°C to 150°C
  • Drain-Source Voltage: 20V
  • Continuous Drain Current: 600mA @ 25°C
  • On-Resistance (Max): 620mOhm @ 600mA and 4.5V Gate-Source Voltage
  • Gate Charge: 0.7nC @ 4.5V Gate-Source Voltage
  • Input Capacitance: 21.3pF @ 10V Drain-Source Voltage
  • RoHS Compliant: Yes
  • REACH Unaffected: Yes
  • Power Dissipation (Max): 380mW

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Shipping Information

Shipped from HK warehouse
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