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BCX5516E6433HTMA1

Part No BCX5516E6433HTMA1
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single
Description TRANS NPN 60V 1A SOT-89
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 60V
Max Vce (sat) 500mV @ 50mA, 500mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 150mA, 2V
Maximum Power Dissipation 2W
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT89
Win Source Part Number 1022811-BCX5516E6433HTMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BCX5516E6433HTMA1 CAD Model

Description

The Infineon Technologies BCX5516E6433HTMA1 is an NPN transistor with a collector-emitter breakdown voltage of 60V and a maximum current collector of 1A.

  • Manufacturer: Infineon Technologies
  • Transistor Type: NPN
  • Collector-Emitter Breakdown Voltage: 60V
  • Maximum Current Collector: 1A
  • Maximum Vce: 500mV @ 50mA, 500mA
  • Typical Gain (hFE) (Min): 100 @ 150mA, 2V
  • Package: PG-SOT89
  • Application: Discrete semiconductor products

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