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SSM3K35MFV

Part No SSM3K35MFV
Manufacturer Toshiba Semiconductor and Storage
Catalog Electronic Wholesale
Description High-Speed Switching Applications Analog Switch Applications
Sample
Rohs State rohs
ECAD Module
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Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 1259518-SSM3K35MFV
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM3K35MFV CAD Model

Description

The SSM3K35MFV is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Toshiba Semiconductor and Storage. It is designed for load switch applications, DC-DC converters, and other power management circuits. This MOSFET features a low on-resistance, which contributes to high efficiency and reduced power dissipation. Its small package size makes it suitable for portable and space-constrained applications.

Applications

  • Load switch circuits: Used for enabling or disabling power to specific sections of a circuit.
  • DC-DC converters: Employed in voltage regulation and power conversion circuits.
  • Power management in portable devices: Commonly found in smartphones, tablets, and other battery-powered devices.
  • LED lighting: Used in LED drivers for controlling current to LEDs.
  • Battery protection circuits: Helps prevent overcharging or over-discharging of batteries.

Features

  • P-Channel MOSFET: Suitable for low-side switching applications.
  • Low On-Resistance (RDS(on)): Reduces power loss and improves efficiency.
  • Low Gate Charge (Qg): Enables fast switching speeds.
  • Small Package: UFM package for compact designs.
  • Lead-Free: Compliant with RoHS standards.
  • Enhancement Mode: Normally off, requiring a negative gate voltage to turn on.

Benefits

  • High Efficiency: Low on-resistance minimizes power dissipation, increasing efficiency.
  • Fast Switching: Low gate charge allows for quick turn-on and turn-off times.
  • Compact Design: Small package saves board space in portable devices.
  • Simplified Circuit Design: Easy to integrate into various circuit configurations.

Additional Details

The SSM3K35MFV is typically used in applications where space is at a premium. The UFM package is designed for surface mounting and helps to minimize the overall size of the circuit. The low on-resistance (RDS(on)) is a crucial parameter for minimizing power loss, especially in battery-powered applications. The gate-source voltage (VGS) needs to be carefully controlled to ensure that the MOSFET operates within its specified limits. The datasheet provides comprehensive information on absolute maximum ratings, electrical characteristics, and thermal resistance. Thermal management is essential, especially when operating at higher currents. The SSM3K35MFV from Toshiba Semiconductor offers a compact and efficient solution for load switching and power management needs in a wide range of electronic devices. By minimizing on-resistance and offering rapid switching, the SSM3K35MFV enables enhanced efficiency and power conservation across varied applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
765+ $0.0655 $50.1075
1,860+ $0.0538 $100.0680
2,880+ $0.0521 $150.0480
3,970+ $0.0504 $200.0880
5,125+ $0.0488 $250.1000
6,865+ $0.0437 $300.0005
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 666,778 pieces
MOQ: 765 pcs
Order Increment : 1 pcs
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