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BSS138LT1G

Part No BSS138LT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 50V 200MA SOT-23
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 50V
Continuous Drain Current at 25°C 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Gate-Source Threshold Voltage 1.5V @ 1mA
Max Input Capacitance 50pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 225mW (Ta)
Maximum Rds On at Id,Vgs 3.5 Ohm @ 200mA, 5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 012157-BSS138LT1G
Family Name BSS138L
Introduction Date June 10, 2004
ECCN EAR99
Country of Origin China, Japan, United States of America
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Power Management, Consumer Electronics, Portable Devices, Industrial, Automotive
Ultra Librarian 3D Model Ultra Librarian BSS138LT1G CAD Model

Description

ON Semiconductor BSS138LT1G N-Channel Logic Level MOSFET

The BSS138LT1G is a versatile N-Channel Logic Level MOSFET from ON Semiconductor, renowned for its efficient power control in a compact SOT-23 package. This high-performance transistor is designed to meet the stringent requirements of modern electronic circuits, providing a reliable solution for switching and amplification applications.

With a drain-source voltage (Vds) of 50V and a continuous drain current (Id) of 200mA, the BSS138LT1G is capable of handling moderate power levels, making it suitable for a wide range of applications. The device boasts a low on-resistance (Rds(on)) of just 3.5 Ohms at a Vgs of 10V, ensuring efficient operation with minimal power loss, which is crucial for battery-powered and energy-sensitive designs.

The BSS138LT1G operates at logic level gate drive voltages, which means it can be directly driven by low-voltage logic circuits without the need for level shifters. This feature simplifies circuit design and reduces component count, making it ideal for interfacing with microcontrollers, logic gates, and other digital circuits that operate at low voltages.

One of the key advantages of the BSS138LT1G is its fast switching speed. This is particularly important in applications where high-frequency operation is required, such as PWM (Pulse Width Modulation) controllers, DC-DC converters, and motor drivers. The device's fast switching characteristics help reduce switching losses and improve overall efficiency.

Additionally, the MOSFET is designed with built-in ESD (Electrostatic Discharge) protection, providing robustness against transient voltage spikes, which can be detrimental to electronic components. This feature enhances the reliability and longevity of both the MOSFET and the end product.

The BSS138LT1G is RoHS compliant and halogen-free, reflecting ON Semiconductor's commitment to environmental sustainability. It is suitable for use in a variety of applications, including load switching, power management, level shifting, and as a low-side switch in power control systems.

In summary, the ON Semiconductor BSS138LT1G N-Channel Logic Level MOSFET is a high-efficiency, fast-switching, and robust component that is well-suited for a broad range of electronic applications, offering designers a compact and energy-efficient solution for their circuitry needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,415+ $0.0354 $50.0910
3,015+ $0.0332 $100.0980
4,675+ $0.0321 $150.0675
6,715+ $0.0298 $200.1070
8,715+ $0.0287 $250.1205
10,870+ $0.0276 $300.0120
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 900,000 pieces
MOQ: 1415 pcs
Order Increment : 1 pcs
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