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IRF7821TRPBF

Part No IRF7821TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 13.6A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 13.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 14nC @ 4.5V
Max Input Capacitance 1010pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 9.1 mOhm @ 13A, 10V
Temperature Range - Operating -55°C to 155°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 001953-IRF7821TRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF7821TRPBF CAD Model

Description

The Infineon Technologies IRF7821TRPBF is an N-channel MOSFET with a drain-source breakdown voltage of 30V.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 13.6A @ 25°C
  • Maximum Rds On @ Id, Vgs: 9.1 mOhm @ 13A, 10V
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 14nC @ 4.5V
  • Maximum Input Capacitance: 1010pF @ 15V
  • Package: 8-SOIC (0.154", 3.90mm Width)
  • Suitable for: Discrete Semiconductor Products

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $5.1881 $51.8810
21+ $4.8598 $102.0558
32+ $4.6956 $150.2592
46+ $4.3672 $200.8912
60+ $4.2030 $252.1800
75+ $4.0389 $302.9175
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Availability: 4,540 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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