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AUIRLR3410TR Infineon Technologies
Same model may have multiple batches, images only for reference.

AUIRLR3410TR

Part No AUIRLR3410TR
Manufacturer Infineon Technologies
Catalog FETs - Single
Description MOSFET N-CH 100V 17A DPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tape and Reel
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 17A
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Maximum) at Id, Vgs 105mOhm at 10A, 10V
Gate Source Voltage(th) (Maximum) at Id 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 34nC at 5V
Gate Source Voltage (Maximum) ±16V
Input Capacitance (Ciss) (Maximum) at Vds 800pF at 25V
Power Dissipation (Maximum) 79W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D-Pak
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity 2,000
MSL Level 1 (Unlimited)
Win Source Part Number 729696-AUIRLR3410TR
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AUIRLR3410TR CAD Model

Description

The Infineon Technologies 729696-AUIRLR3410TR is a N-Channel MOSFET with a Drain-Source Breakdown Voltage of 100V and Continuous Drain Current of 17A.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 17A
  • Gate Source Voltage(th): 2V @ 250μA
  • Input Capacitance (Ciss): 800pF @ 25V
  • Package: D-Pak
  • Temperature Range: -55°C to 175°C
  • Maximum Power Dissipation: 79W
  • Maximum Gate Charge (Qg): 34nC @ 5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.1157 $61.3635
115+ $1.0441 $120.0715
175+ $1.0083 $176.4525
250+ $0.9367 $234.1750
325+ $0.8997 $292.4025
405+ $0.8639 $349.8795
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 38,997 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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