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HBDM60V600W-7

Part No HBDM60V600W-7
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Arrays
Description TRANS NPN/PNP 65V/60V SOT363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity NPN, PNP
Maximum Current Collector 500mA, 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage 65V, 60V
Max Vce (sat) 400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA
Collector Cut-off Current(Max) 100nA
Typical Gain (hFE) (Min) 100 @ 100mA, 1V / 100 @ 150mA, 10V
Maximum Power Dissipation 200mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-363
Win Source Part Number 067820-HBDM60V600W-7
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian HBDM60V600W-7 CAD Model

Description

Introducing the HBDM60V600W-7 MOSFET from Diodes Incorporated

The HBDM60V600W-7 is a high-performance, N-Channel enhancement mode Field Effect Transistor (FET) brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor market. This MOSFET is designed to deliver efficiency and power handling capabilities that are well-suited for a wide range of applications, including power management, load switching, and motor control in consumer, industrial, and automotive environments.

Key Features

  • Voltage and Current: The device operates at 60V drain-source voltage (VDS) with a continuous drain current (ID) of 600mA, making it capable of handling moderate power levels in compact designs.
  • Low On-Resistance: With an RDS(on) as low as 1.2Ω at VGS=10V, this MOSFET ensures minimal power loss during operation, enhancing the overall efficiency of the system.
  • High-Speed Switching: The HBDM60V600W-7 is designed for fast switching applications, thanks to its low input and output capacitance.
  • Thermal Performance: Housed in a small SOT-323 package, the MOSFET offers excellent thermal performance, ensuring reliability even under high switching frequencies and current loads.
  • Lead-Free and RoHS Compliant: In line with environmental standards, this product is completely lead-free and RoHS compliant, minimizing the ecological impact and meeting global regulatory requirements.

Applications

The versatility of the HBDM60V600W-7 allows it to be integrated into various circuits and systems. Some of the typical applications include:

  • DC/DC converters
  • Battery management systems
  • Power supply switches
  • Load/relay drivers
  • Motor control circuits

Quality and Reliability

Diodes Incorporated is committed to providing products that meet the highest standards of quality and reliability. The HBDM60V600W-7 MOSFET is no exception, as it has undergone rigorous testing and quality control measures to ensure it meets the stringent requirements of the industry.

For detailed specifications, application notes, and additional resources, customers are encouraged to visit the official Diodes Incorporated website or contact their local sales representative.

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Shipping Information

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